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2001 | PATENTS
| INTERNET
| Chechulin O. Sh., Vodop'yanov A. G., Serebryakova A. V., Kozhevnikov G. N. Interaction of Aluminum Oxycarbides and Carbide with Silicon Oxides // Izv. Akad. Nauk SSSR, Met. - 1975. - 4. - 18-23. (Russian). [no abstract] |
| Cutler I. B., Miller P. D., Rafaniello W., Park H. K., Thompson D. P., Jack K. H. New Materials in the Si-C-Al-O-N and Related Systems // Nature. - 1978. - 275. - 434-435. Discovery of a continuous series of solid solutions, with the 2H wurtzite-type structure, between silicon carbide (SiC) and aluminum nitride (AlN) is reported. This, together with observations of the additional solubility of aluminum oxycarbide (Al2OC), suggest a large extension to the field of sialons. |
| Cutler I. B., Miller P. D. Solid Solution and Process for Producing a Solid Solution / US Pat. 4141740, 1979-02-27. A solid solution and a process for producing a solid solution, the solid solution including at least the compounds: silicon carbide and aluminum oxycarbide, and also aluminum nitride. The new material including all three compounds is referred to by the acronym, SiCAlON, which is a coined term consisting of the chemical abbreviations for the elements present in the solid solution. The solid solution is obtained by heating an intimate mixture of reactants above about 1550°C. The silicon carbide in the solid solution has the alpha or hexagonal structure and the aluminum nitride has the wurtzite or hexagonal structure. The solid solution is characterized by the substantial absence of iron or other impurities that tend to encourage the formation of silicon carbide as a separate phase having a beta or cubic structure. |
| Elyutin V. P., Pavlov Yu. A., Chelnokov V. S. Reaction of Aluminum Oxide with Carbon at 1700 - 2000 °C // Izv. Akad. Nauk SSSR, Neorg. Mater. - 1973. - 9(8). - 1365-1366. (Russian). [no abstract] |
| Filonenko N. E., Zaretskaya G.M., Emlin B. I. Aluminum Monooxycarbide in Slag Formed during Production of an Aluminum Alloy // Izv. Akad. Nauk SSSR, Neorg.Mater. - 1972. - 8(9). - 1673-1674 (Russian). [no abstract] |
| Hannah R. C., Osborne J. A., Templeton G., Frazer E. J., Welch B. J. Co-deposition of Silicon and Aluminum in Aluminum Reduction Cells / Molten Salt Electrolysis Met. Prod., Int. Symp. - Inst. Min. Metall.: London, 1977. - 7-13. Al-Si alloys were produced by reduction of SiO2 in conventional Hall-Heroult cells for Al electrowinning. Expts. were made to det. the max. SiO2 concn. compatible with stable cell operation. Particular attention was given the reduction reactions of SiO2 that occur at the metal pad within the bulk of the electrolyte, and adjacent of the C cathode. Any SiO2 trapped underneath the metal pad tends to form SiC or the mixed carbide SiC-Al4C3. Stable operating conditions were achieved when the cells operated at an av. current efficiency of 84.4% and cell temperatures of 970-985°C. An Al-7 wt.% Si alloy was produced. |
| Kikuchi T., Ochai S. Carbothermic Reduction of Alumina and Aluminous Ores and Effect of Several Additional Materials // J. Japan Inst. Metals. - 1970. - 34(6). - 6437. [no abstract] |
| Kozhevnikov G. N., Vodop'yanov A. G., Ovchinnikova L. A., Shibaeva S. V. Reaction of Monovalent Aluminum Oxide with Silicon Carbide // Izv. Akad. Nauk SSSR, Met. - 1976. - 6. - 76-79. (Russian). The reaction was studied at 1580 - 1800 °C. In contact with Al2O vapors, the SiC briquet weight was max. at ~1650 °C. The heating of SiC in Ar resulted in continuous weight losses. The weight increment was associated with accumulation of the reaction products. According to x-ray diffraction, Si, Al, and a-Al4SiC4 were found on the briquet surface heated at 1800 °C. According to IR analysis, the condensate obtained at 1580 °C consisted of SiC, Al carbides, and Al oxycarbides. At 1800 °C, only SiC was detected. |
| Kozhevnikov, G. N.; Vodop'yanov, A. G.; Ovchinnikova, L. A.; Shibaeva, S. V. Reaction of Monovalent Aluminum Oxide with Silicon Carbide // Izv. Akad. Nauk SSSR, Met. - 1976. - 6. - 76-79. (Russian). The reaction was studied at 1580-1800 °C. In contact with Al2O vapors, the SiC briquet weight was max. at ~1650 °C. The heating of SiC in Ar resulted in continuous weight losses. The weight increment was associated with accumulation of the reaction products. According to x-ray diffraction, Si, Al, and a-Al4SiC4 were found on the briquet surface heated at 1800 °C. According to IR analysis, the condensate obtained at 1580 °C consisted of SiC, aluminum carbides, and aluminum oxycarbides. At 1800 °C, only SiC was detected. |
| Larrère Y. Etude de propriétés physico-chimiques et abrasives dans le système Al2O3-Al4C3 / Thèse Doct. Ing. - Universite Strasbourg, 1979. [no abstract] |
| Nickl J., Schweitzer K. K. Gas-Phase Deposition in the Titanium-Silicon-Carbon System // J. Less-Common Metals. - 1972. - 26(3). - 335-353. Chem. vapor deposition in the system Ti-Si-C was studied with the reaction system TiCl4(g) + SiCl4(g) + CCl4(g) + H(excess). A complete deposition diagram (xi(s) = f(xi(g); xj(g))) at 1200° and normal pressure has been constructed. The morphology and intergrowth in 2- or 3-phase equil. and esp. the properties of the complex carbide Ti3SiC2 were studied. In contrast to the deposition of binary phases, which are deposited within a certain distance of the concn. line (vapor deposition range), the ternary phases (Ti3SiC2 or Ti5Si3Cx) are deposited within distinct concn. fields (xi(g); xj(g)). A deposition model is proposed. |
| Nickl J., Schweitzer K. K., Luxenberg P. Chemical Vapor Deposition of the Systems Titanium-Silicon Carbon and Titanium-Germanium-Carbon / Chem. Vap. Deposition, 3rd. Proc.Int. Conf. - 1972. - 4-23. The chem. vapor deposition of compds. from the reactions of TiCl4, SiCl4, CCl4, and H2 at 1000-1300° and of TiCl4, GeCl4, CCl4, and H2 at >900° was investigated. Vapor-phase and deposition diagrams were detd. which showed the dependence between vapor and solid compns. Morphol. and intergrowth in 2- or 3-phase equil., esp. of Ti3SiC2 were studied. Ternary phase deposition was described by a 2-dimensional vapor concn. field. All known binary and ternary phases of the 2 systems were deposited except for TiGe. A new phase of Ti5Ge4 was obsd. and its crystal structure detd. A deposition model was discussed. |
| Nickl J., Schweitzer K. K. Preparation of Intermetallic Compounds by Chemical Vapor Deposition / Chem. Vapor Deposition, 2nd. Proc.Int. Conf. - 1970. - 297-327. The chem. vapor deposition of pure and homogeneous phases of binary and ternary systems is reported. The systems used in chem. vapor deposition and the resulting phases were: TiCl4 + SiCl4 + H2: TiSi2, TiSi(r), TiSi(h), Ti5Si4(r), Ti5Si4(h), Ti5Si3, Ti5Si3Cx; TiCl4 + SiCl4 + CCl4 + H2: Ti3SiC2, TiC, SiC, TiSi2; TiCl4 + GeCl4 + CCl4 + H2: Ti2GeC; TiCl4 + SnCl4 + CCl4 + H2: TiC (where r denotes pure and h denotes homogeneous). It is possible to deposit all known phases of the binary system Ti/Si and even to find the so far unknown phase TiSi(r). For the Ti-Si system a deposition model is discussed in comparison with the pure Si deposition (SiCl4 + H2). The Si deposition is independent of the Ti content of the vapor phase and the deposited Si is titanized in a secondary step. |
| Ono K., Moriyama J. Measurements of Free Energy of Formation of Aluminum Oxycarbide (Al4O4C) // Nippon Kinzoku Gakkaishi. - 1973. - 37(4). - 390-393. (Japanese). [no abstract] |
| Panczyk J., Niemyski T., Vinogradov L. N., Sinel'nikova V. S. Production of Ti3SiC2 from the gas phase and some chemical and physical properties of this material // Szklo Ceram. - 1972. - 23(5). - 144-146. The raw materials were purified TiCl4, SiCl4, CCl4, and H2. The decompn. of chlorides was achieved in the given app., and the products of the following reaction deposited on the walls of the graphite tube: 12H2 + 3TiCl4 + SiCl4 + 2 CCl4 = Ti3SiC2 + 24HCl. With the same amt. of reagents, a marked increase in the no. of individual crystal grains was obsd. upon a rise in temp. The optimum flow rate of the chloride mixt. was 0.21 mole/hr and there was a 15-fold excess of H in relation to the calcd. stoichiometric amt. The crystals were obtained in the form of pyramids, plates, and dendrites of size <1 mm. They had a metallic gloss, an elec. resistance of the order 1 W-cm, and a microhardness (100 g load) 2600 ± 570 kg/mm2. Their m.p. was >3000° and d. 4.51. Chem. anal. revealed a compn. approx. equal to the stoichiometric one: 73.36% Ti, 14.8% Si, and 12.0% C by wt. |
| Schneider G., Gauckler L. J., Petzow G. Phase Equilibria in the Si, Al, Be / C, N System // Ceramurg. Int. - 1979. - 5(3). - 101-104. Phase equilibria studies in patrs of system Si, Al, Be / C, N were carried out at 1760 and 1860 °C. In the carbide system Al4C3-SiC-Be2C seven new compounds were found and characterized by their chemical composition and crystal symmetry. In the nitride system AlN-Si3N4-Be3N2 a solid solution between AlN and BeSiN2 was found to exist besides the already known compounds. The carbonitride system showed solid solution between a-Al4SiC4 and a-Al5C3N. Furthermore the compound AlN · SiC · Al4C3 was found to exist. |
| Schoennahl J., Willer B., Daire M. Preparation and Properties of Sintered Materials in the Systems Silicon-Aluminum-Carbon and Silicon-Titanium-Carbon // Mater. Sci. Monogr. - 1979. - 4 (Sintering - New Dev.). - 338-345. Dense ceramic materials containing SiC are obtained by hot-pressing of compounds from the systems Si-Al-C and Si-Ti-C. Some properties of the compounds, particularly the ternary carbides Al4SiC4 and Ti3SiC2, were investigated such as sintering ability, oxidation resistance, reaction with N at high temperatures, reaction with some molten oxides, stability in aqua solutions, thermal stability, thermal expansion, hardness, and compressive strength. Special compounds and sintering processes have been settled, which lead to a good consolidation of the powders. |
| Vodop'yanov A. G., Chechulin O. Sh., Serebryakova A. V., Kozhevnikov G. N., Moleva N. G. Reaction of Aluminum (I) Oxide in the Aluminum-Oxygen-Carbon System // Izv. Akad. Nauk SSSR, Met. - 1976. - 12(5). - 64-68 (Russian). The title reaction was studied at 1530 - 1800 °C by using a continuous-weighing method. Al2O vapors were synthesized from a mixture containing Al2O3 - 65.4% and Al - 34.6% at 1800 °C. Al4C3 was prepared by sintering Al - 77.5% + graphite 22.5% in Ar at 1600 °C for 3 h and Al4O4C by heating Al2O3 + Al4C3 at 1750 °C in Ar. Al2O vapors react with graphite to give Al4C3. The reaction is accompanied by weight losses. IR analysis of the condensate showed Al4C3 and Al4O4C. The appearance of Al4O4C was associated with the secondary reaction 12Al2O + 8CO = 5Al4O4C + Al4C3. The heating of Al4C3 in Al2O vapors resulted in substantial weight losses. The heating of Al4O4C led only to its dissociation (Al4O4C = Al2O3 + Al2OC). |
| Vodop'yanov A. G., Kozhevnikov G. N., Zakharov R. G. Reaction of Aluminum Oxide with Carbon // Izv. Akad.Nauk SSSR, Met. - 1978. - 4. - 12-17. (Russian). [no abstract] |
