Arunajatesan
S., Carim A. H. Synthesis of Titanium Silicon
Carbide // J. Am. Ceram. Soc. - 1995. - 78(3). - 667-672.
[no
abstract]
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Borsella
E., Boptti S., Cesile M. C., Martelli S., Alexandrescu R., Giorgi
R., Nannetti C. A., Turtu S., Zappa G. Nanoscale
Si-C and Al-O-(N,C) Ceramic Powders by Laser Synthesis from Gaseous
Precursors // Nanostruct. Mater. - 1995. - 6(1-4). - 341-344.
Laser induced photosynthesis has been employed
to produce nanosized aluminium oxide powders. The dependence of the
reaction outcomes on the process parameters, in particular on reactant
gases (trimethylaluminium TMA and nitrous oxide) relative concentration,
has been investigated in several different conditions. The experimental
results indicate two main reaction paths. Low TMA relative concentration
leads to the formation of nanocrystalline g-Al2O3
with traces of Al3O3N compounds. Increasing
the TMA concentration the synthesis of aluminium oxycarbide (Al2OC)
is observed. Only the first reaction path is able to produce, after
calcining at 1400°C, nanosized a-Al2O3 powder.
Preliminary attempts in sintering laser produced silicon carbide have
shown, that, due to the nanometric dimension of the powder particles,
it is possible to retain the b-SiC low temperature phase even for
sintering temperature up to 2150°C.
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Ivanovsky A. L., Novikov D. L., Shveikin G. P. Electronic
Structure of Ti3SiC2
// Mendeleev Commun. - 1995. - (3). - 90-91.
[no
abstract]
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Lis J., Miyamoto Y., Pampuch R., Tanihata K. Ti3SiC2-based
Materials Prepared by HIP-SHS Techniques //
Mater. Lett. - 1995. - 22(3,4). - 163-168.
[no
abstract]
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Lis J., Pampuch R., Stobierski L., Faryna M. Preparation
and Properties of New Structural Ceramics in the System of Ti-Si-C
/ Adv. Ceram. Struct. Tribol. Appl., Proc. Int. Symp. - Montreal,
Que., 1995. - 571-580.
Self-propagating
high-temp. synthesis (SHS) is a method having some special opportunities
in a prodn. of new ceramic materials. This is discussed taking as
an example materials in the system Ti-Si-C. An interesting phase existing
in this system is Ti3SiC2. This phase has some
unique properties including low hardness, high fracture and impact
resistance, and potential ductile behavior. Because of the specific
mechanisms of rapid combustion-type SHS reactions, it is possible
to prep. of Ti3SiC2-rich powders that can be
used as the precursors for prepn. of Ti3SiC2-based
polycrystals. Densification of these powders occurs with some secondary
phenomena such as liq.-phase reactions with transient intermetallic
phase and recrystn. of grains. As a result, materials with controlled
microstructures in form of particulate composites with Ti3SiC2
matrix and TiC inclusions can be obtained. The main feature of these
materials is high fracture toughness, in a range of 7 to 9 MPa m1/2
and specific mechanism of failure.
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Naka
M., Feng J., Schuster J. C. High Temperature
Reactions of Ti with SiC // Trans. JWRI. - 1995. - 24(1). -
77-82.
Bonding of SiC to SiC was conducted using
Ti foil at bonding temps. from 1373 K to 1773 K in vacuum. The total
diffusion path between SiC and Ti was investigated in detail at 1673
K using Ti foil with a thickness of 50 µm. At a bonding time of 0.3
ks, TiC at the Ti side and a mixt. of Ti5Si3Cx
and TiC at the SiC side were formed, yielding the structure sequence
of b-Ti/TiC/Ti5Si3Cx + TiC/SiC. Furthermore,
at the bonding time of 0.9 ks, a Ti5Si3Cx
layer phase appeared between SiC and the mixt. of Ti5Si3Cx
and TiC. Upon the formation of Ti3SiC2 (T phase)
after the bonding time of 3.6 ks, the complete diffusion path was
obsd. as follows: .beta.-Ti/TiC/Ti5Si3Cx
+ TiC/Ti5Si3Cx/ Ti3SiC2
/SiC. The activation energies for growth of TiC, Ti5Si3Cx
and Ti3SiC2 were 194, 242 and 358 kJ/mol, resp.
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Pampuch
R., Raczka M., Lis J. The Role of Liquid Phase
in Solid Combustion Synthesis of Ti3SiC2
// Int. J. Mater. Prod.Technol. - 1995. - 10(3-6). - 316-324.
[no
abstract]
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Pampuch R., Lis J. Ti3SiC2
- a Plastic Ceramic Material // Adv. Sci.
Technol. - 1995. - 3B (Ceramics: Charting the Future). - 725-732.
Hexagonal Ti3SiC2 shows
a unique combination of properties that are typical for ceramics with
a room-temp. plasticity akin to the one of metals. A rational explanation
of plasticity of Ti3SiC2 crystals is presented
in terms of the crystal structure and interat. bonds. Plasticity is
obsd. also in polycrystals contg. the hexagonal Ti3SiC2
phase, stable up to 1400-1450 °C.
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Qiu
C., Metselaar R. Thermodynamic Evaluation of
the Al2O3
- Al4C3
System and Stability of Al-oxycarbides //
Z. Metallkd. - 1995. - 86(3). - 198-205.
Thermodynamic properties of the pseudo-binary
Al2O3-Al4C3 system have
been evaluated based on thermodynamic models. An ionic-liquid model
was applied to the liquid slag phase and a compound-energy model to
Al2OC. Both the models are with two sublattices' and latter
one can be extended to describe the solid solution phases formed among
Al2OC, AlN, and SiC. A description of the system was obtained
and then used to calculate the Al2O3-Al4C3
phase diagram which shows satisfactory agreement with experimental
observation. A series of potential diagrams was also calculated for
the Al-C-O system, which illustrate the effect of partial pressures
of Al, CO, and CO2 gas on the stability of Al4C3,
Al2O3, Al4O4C, and Al2OC
at different temperatures. These diagrams can provide an important
basis for the carbothermic reduction of alumina to produce Al4C3.
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Tong
X., Okano T., Iseki T., Yano T. Synthesis and
High Temperature Mechanical Properties of Ti3SiC2/SiC
Composite // J. Mater. Sci. - 1995. - 30(12).
- 3087-3090.
[no
abstract]
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Tsuchida
T., Kitagawa T., Inagaki M. Self-Combustion
Reaction Induced by Mechanical Activation of Al-Si-C Powder Mixtures
// Eur. J. Solid State Inorg. Chem. - 1995. - 32(7/8). - 629-638.
The powders of Al, Si and C mixed in various
molar ratios were ground in a planetary ball mill. When the mech.
activated mixts. were exposed to air, they ignited spontaneously and
the self-propagating high-temp. synthesis (SHS) took place in two
successive steps. The final products were aluminum nitride, aluminum
carbide, aluminum oxycarbide, silicon carbide and alpha alumina. From
the measurement of the lattice const., it was found that aluminum
nitride obtained is solid solns. in the system of AlN-Al2OC-SiC.
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Wang
Y., Carim A. H. Ternary Phase Equilibria in
the Zr-Si-C System // J. Am. Ceram. Soc. - 1995. - 78(3). -
662-666.
[no
abstract]
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Yamaguchi A.,
Zhang S. Synthesis and Some Properties of
Al4SiC4 // J. Ceram. Soc. Jpn. - 1995. - 103(1). - 20-24.
The synthesis process and the formation
mechanism of Al4SiC4 were investigated using
Al, Si, and C as starting materials. Properties such as hydration
resistance of the synthesized Al4SiC4 were
examined. SiC and Al4C3 begin to form from
about 800 °C and 900 °C, respectively. When the temperature is above
1300 °C, both products further react with each other to form Al4SiC4.
With increasing temperature and time, the formation ratio of Al4SiC4
increases. The addition of Al2O3 can facilitate
the formation of Al4SiC4. The hydration resistance
of Al4SiC4 is excellent and sufficient for
the practical use.
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Yano
T. Synthesis and Mechanical Properties of Ti3SiC2
Ceramics // Bull. Res. Lab. Nucl. React. -
1995. - 19. - 88-89.
Ti, TiC and TiSi powders were reaction sintered,
wet milled, and hot pressed at 45 MPa and 1400° for 30 min to give
Ti3SiC2 ceramic specimens. The fracture toughness
was 6.9 MPa-m0.5 at room temp. The flexure strength in bending was
> 500 MPa at room temp. and 1000° and much less at 1200°. During
air oxidn., the surface oxide layer was porous and nonprotective at
1000°.
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