1950-1959 | 1960-1969 | 1970-1979 | 1980-1989 | 1990 | 1991 | 1992 | 1993 | 1994 | 1995 | 1996 | 1997 | 1998 | 1999 | 2000 | 2001 | PATENTS | INTERNET

Application of Rietveld method to Ti3SiC2 results in a better understanding of the ternary phase
User Program study with Prof. M. Barsoum and Dr. T. El-Raghy of Drexel University
(downloaded from Diffraction User Center web-site)

Ti3SiC2 behaves plastically at elevated temperatures, is resistant to thermal shock, possesses good resistance to oxidation, is extremely refractory, and maintains its strength at high temperatures. This combination of properties makes Ti3SiC2 a candidate for high-temperature structural applications.
A Rietveld full pattern least-squares refinement of the room temperature pattern (below) and high temperature patterns were used to confirm the Ti3SiC2 structure (right) and to determine the lattice thermal expansion.


1950-1959 | 1960-1969 | 1970-1979 | 1980-1989 | 1990 | 1991 | 1992 | 1993 | 1994 | 1995 | 1996 | 1997 | 1998 | 1999 | 2000 | 2001 | PATENTS | INTERNET

INDEX | MAIN | NEWS | ARCHIVE | DATA BANK | ADD | INSTITUTIONS | PUBLISHERS | LINKS | SEARCH | FORUM | ADVERTISING | PLUS | EDITORS

 

Hosted by uCoz