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Choi S. K., Chandrasekaran M., Brabers M. J. Interaction Between Titanium and Silicon Carbide // J. Mater. Sci. - 1990. - 25(4). - 1957-1964.
Interaction between Ti and SiC particles was studied by electron microprobe, SEM and TEM. The distribution of the reaction products from the SiC to the Ti end is reported. Particular attention is given to the microstructure and phase anal. (TiC, Ti5Si3, Ti3SiC2) in areas near to the SiC. The implications of the obsd. microstructural and structural details are discussed.
Chryssoulakis Y., Righas G. Electrochemical Study of the Aluminum Carbide or Oxycarbide Formation in Acidic Cryolite-Alumina Melts at 1300 K // Bull. Soc. Chim. Fr. - 1990. - 9/10. - 635-640. (French).
In the present work which is considered as a preliminary one we study the electrochemical reaction of the aluminum carbide or oxycarbide formation in acidic cryolite-alumina melts at 1300 K using triangular voltamperometry on graphite electrodes. Five reoxidation peaks are observed. The first of them (observed at the most cathodic potential) is attributed to the aluminium reoxidation reaction, while the other four characterize the reoxidation of the aluminum carbides or oxycarbides which are formed during the cathodic potential sweep. The study of the voltamperograms obtained and the comparison of the observed reoxidation peak potentials with the calculated ones using appropriate available thermodynamic data permit to propose three reoxidation schemes for the compounds Al4C3, Al4O4C and Al2OC.
Gochnour S., Bright J. D., Shetty D. K., Cutler R. A. Solid Particle Erosion of SiC-Al2OC Ceramics // J. Mater. Sci. - 1990. - 25. - 3229-3235.
Erosion rates of SiC-Al2OC ceramics, with Al2OC content varying from 5 to 75 wt%, were assessed using 240-grit alumina abrasive particles accelerated to a velocity estimated at 120 m sec-1 and impacting the target at normal incidence. The target ceramics varied in hardness from 27.1 GPa for SiC - 5 wt% Al2OC to 10.8 GPa for SiC - 75 wt% Al2OC, but the fracture toughness was essentially independent of composition (K1C ~ 3.5 MPa m1/2). The erosion weight loss varied linearly with the test duration for all the ceramics and the erosion rate decreased systematically with increasing target hardness; the hardness dependence of the erosion rate was, however, much greater than the predictions of the currently available erosion models.
Gottselig B., Gyarmati E., Naoumidis A., Nickel H. Joining of Ceramics Demonstrated by the Example of Silicon Carbide / Titanium // J. Eur. Ceram. Soc. - 1990. - 6(3). - 153-160.
The reaction behavior of Ti sputtered on SiC was investigated in a series of tests. At 1250-1500°C, mainly the ternary phase Ti3SiC2 is formed (>90%). In joining expts. of SiC with 1-3 µm thick Ti layers at 1450°C and compaction pressures 5-30 MPa, the formation of the ternary phase leads to a high joint strength. The achieved bending strength (.sigma.M ~ 286 MPa; m ~ 10) is comparable to that of the starting materials (.sigma.M ~ 303 MPa; m ~ 15).
Kuo S.-Y., Virkar A. V. Morphology of Phase Separation in AlN - Al2OC and SiC - AlN Ceramics // J. Am. Ceram. Soc. - 1990. - 73(9). - 2640-2646.
Solid solutions in the AlN-Al2OC and SiC-AlN systems were fabricated by hot-pressing powder mixtures in graphite dies. X-ray diffraction showed the samples to be single phases of 2H structure. The samples were annealed between 1600° and 1900°C for up to 1000 h. In the SiC-AlN system, optical microscopy and X-ray diffraction failed to reveal microstructural or phase changes. However, electron microscopy showed that samples had decomposed. Streaking of diffraction spots occurred along directions orthogonal to {012} planes (~43° off the c axis), which is approximately the direction along which the elastic energy function is a minimum. The orientation-dependent Young's modulus was also a minimum along this direction. In AlN-Al2OC, optical microscopy and X-ray diffraction indicated the occurrence of decomposition. The precipitates were disk-shaped with [001] orthogonal to the disks. The occurrence of decomposition along the [001] direction suggests that it is the elastically soft direction.
Lihrmann J.-M. Importance of Liquid Phase for Processing of Structural Ceramics in the SiCAlON System / Proc. 11th Riso International Symposium on Metallurgy and Materials Science: Structural Ceramics - Processing, Microstructure and Properties. - Riso National Laboratory, Denmark, 1990. - 395-402.
The processing of structural ceramics in the system Si-C-Al-O-N is highly favored in the presence of a liquid phase. The synthesis of aluminum oxycarbide Al2OC from Al2O3 and Al4C3, and the Al2OC-AlN solid solution are used as illustrating examples. The likely existence of a carbon-oxynitride ternary eutectic is briefly discussed.
Lihrmann J.-M. Structural Ceramics within the System Si-C-Al-O-N / VIIth CIMTEC World Ceramics Congress. - Montecatini, 1990.
[no abstract]
McCluskey P. H., Williams R. K., Graves R. S., Tiegs T. N. Thermal Diffusivity / Conductivity of Alumina - Silicon Carbide Composites // J. Am. Ceram. Soc. - 1990. - 73(2). - 461-464.
[no abstract]


Nishino T., Urai S., Okamoto I., Naka M. Titanium Silicon Carbide (Ti3SiC2) Phase in Silicon Carbide / Silicon Carbide Joint Brazed with Copper-Titanium (Cu43Ti57) Alloy // J. Mater. Sci. Lett. - 1990. - 9(12). - 1417-1418.
The joining of SiC to SiC using a Cu 43, Ti 57 at.% filler metal and the intermediate phase formed at the joining layer were studied by microstructure observation and compn. anal. A reaction phase contg. Ti 50, Si 16.7, and C 33.3 at.% was identified.
Oden L. L., McCune R. A. Contribution to the Phase Diagramm Al4C3 - AlN - SiC // J. Am. Ceram. Soc. - 1990. - 73(6). - 1529-1533.
Compositions on the join Al4C3·2AlN - Al4C3·2SiC were investigated using X-ray diffraction and thermal analysis of hot-pressed bodies prepared from materials of various purities. The quaternary phase Al4C3·AlN·SiC was observed in samples prepared from the high-purity elements, but the ternary phases Al4C3·2AlN and Al4C3·2SiC were observed only in samples containing significant impurities. A projection onto the base triangle at 1860 °C for the pseudoternary system Al4C3 - AlN - SiC was constructed using X-ray diffraction, thermal analysis, and existing information in the literature.
Viala J. C., Fortier P., Bouix J. Stable and metastable phase equilibria in the chemical interaction between aluminum and silicon carbide // J. Mater. Sci. - 1990. - 25(3). - 1842-850. (French).
An experimental investigation was carried out on the Al-C-Si ternary system under atmospheric pressure and at temperatures up to 1900 K. From the results obtained, a thermodynamic model based on stable and metastable phase equilibria in the Al-C-Si ternary system was set up in order to provide a general description of the chemical interaction between aluminium and SiC. According to this model, aluminium and SiC are in thermodynamic equilibrium at every temperature lower than 923 K. At 923 ± 3 K, i.e. at 10 K below the melting point of pure aluminium, a quasiperitectic invariant transformation occurs in the Al-C-Si system. In this transformation, solid aluminium reacts with SiC to give Al4C3 and a ternary (Al-C-Si) liquid phase. The carbon content of this liquid phase is very low; its silicon content is 1.5 ± 0.4 at %. From 923 to about 1620 K, aluminium partially reacts with an excess of SiC, leading to a metastable monovariant equilibrium involving SiC, Al4C3 and an aluminium-rich (Al-C-Si) ternary liquid phase, L. The carbon content of this liquid phase, L, remains very low whereas its silicon content increases with temperature from 1.5 ± 0.4 at % at 923 K to 16.5 ± 1 at % at 1620 K. In the temperature range 1670 to 1900 K, two other three-phased monovariant equilibria can be reached by reacting aluminium and SiC. These equilibria involve on the one hand SiC, Al4SiC4, and a liquid phase, L', and on the other hand Al4SiC4, Al4C3 and a liquid phase, L''. The former is a stable equiibrium, the latter is a metastable one. At temperatures higher than about 2200 K, the latter metastable equilibrium is replaced by two monovariant stable phase equilibria including the ternary carbide Al8SiC7.
Zambetakis T., Lihrmann J.-M., Larrere Y., Daire M. Stability of Pure and AlN-alloyed Al2OC and Influence on Abrasive Properties of Al2O3-Al4C3-AlN Materials / Science of Sintering - New Directions for Materials Processing and Microstructural Control. - Plenum Press, NY, 1990. - 613-620.
[no abstract]
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