1950-1959 | 1960-1969 | 1970-1979 | 1980-1989 | 1990 | 1991 | 1992 | 1993 | 1994 | 1995 | 1996 | 1997 | 1998 | 1999 | 2000 | 2001 | PATENTS | INTERNET

Barsoum M. W., El-Raghy T., Brodkin D., Zavaliangos A., Kalidindi S. Synthesis of 312 Phases and Composites Thereof / US 5942455, 1999-08-24.
The 312-type phases, i.e., products comprising an M3X1Z2 phase (M is .gtoreq.1 transition metals; X is .gtoreq.1 of Al, Ga, Ge, and Si; Z is .gtoreq.1 of B, C, and N) are manufd. by forming a powd. mixt. contg. M, X, and Z in an amt. comprising .ltoreq.80 wt.% M3X1Z2, reactively hot pressing the mixt. at 1000-1800.degree. under a pressure of 5-200 MPa for a duration sufficient to form the M3X1Z2. The resulting products have excellent shock resistance, oxidn. resistance, and machinability, and may be present as composites preferably composites in thermal equil. with the single phase or solid solns. of the formula M3X1Z2. Thus 50 g of a mixt. consisting of Ti hydride (purity 99.99%; particle size -325 mesh) 100, hexagonal SiC (purity 97.5%; av. particle size 100 .mu.m) 27.8, and graphite 8.33 g was wrapped in BN-sprayed graphite foil and heated to 1600.degree. at 600.degree./h, held at 1600.degree. for 4 h at 41 kN/h to 42 MPa, held at 42 MPa for 5 h 40 min,, and cooled at 600.degree./h. The resulting Ti3SiC2 had d. 99% of theor., compressive strength at room-temp. and 1300.degree. was 580 .+-. 20 and 260 .+-. 5 MPa, resp., and was easily machinable without lubrication, and easily threaded.

Barsoum M. W., Brodkin D., El-Raghy T., Yaroschuk G. S. Synthesis of H-phase Products / WO 9727965, 1997-08-07.
Products having single phases or solid solutions of the formula M2R1X1 wherein M is transition metal, R is one or more of Si, Al, Ge, Pb, Sn, Ga, P, S, In, As, Tl or Cd, and X is one or more of B, C or N can be prepared by subjecting a powdered mixture containing M, R and X to a temperature of about 1000 DEG C to about 1800 DEG C, preferably under a pressure of about 5 MPa to about 200 MPa. The products so formed have excellent machinability. The products may also be present as composites, preferably composites which are in thermal equilibrium with the single phase or solid solutions of the formula M2R1X1.

Cutler I. B., Miller P. D. Solid Solution and Process for Producing a Solid Solution / US 4141740, 1979-02-27.
A solid solution and a process for producing a solid solution, the solid solution including at least the compounds: silicon carbide and aluminum oxycarbide, and also aluminum nitride. The new material including all three compounds is referred to by the acronym, SiCAlON, which is a coined term consisting of the chemical abbreviations for the elements present in the solid solution. The solid solution is obtained by heating an intimate mixture of reactants above about 1550°C. The silicon carbide in the solid solution has the alpha or hexagonal structure and the aluminum nitride has the wurtzite or hexagonal structure. The solid solution is characterized by the substantial absence of iron or other impurities that tend to encourage the formation of silicon carbide as a separate phase having a beta or cubic structure.

Daire M., Larrere Y., Mangin A. High-Hardness Abrasive Product Based on Alumina and Aluminum Oxycarbides and Process for Preparing Same / US 4341533, 1982-07-27.
The invention relates to a new class of high-hardness abrasive products and wear resistant parts based on alumina and aluminum oxycarbides. By fusing alumina in the prasence of a carbonaceous substance and by controlled cooling, it is possible to obtain a large number of products in which the ratio rho of the number of carbon atoms to number of carbon atoms plus oxigen atoms is between 0.01 and 0.50, and preferably between 0.02 and 0.20. These products are essentially constituted by primary alumina crystals in a eutectic matrix Al2O3 - Al4O4C or Al2O3 - Al2OC.

Dubots D., Toulouse P. Electrically Melted Multiphase Material Based on Alumina and Aluminium Oxycarbide and Oxynitride / US 5023212, 1991-06-11.
The invention concerns a multiphase alumina-based material formed by a matrix of corundum in which microcrystalline phases of aluminium oxycarbide, aluminium oxynitride and aluminium oxycarbonitride are homogeneously dispersed. The combined carbon content is between 0.05 and 5% and the combined nitrogen content is from 0.05 to 5% by weight. The material can be produced by the controlled injection of carbon and nitrogen into a molten alumina bath. The material is used for abrasive products and refractory products with high levels of performance.

El-Raghy T., Barsoum M. W. Process for Making a Dense Ceramic Workpiece / US 5882561, 1999-03-16.
A dense ceramic workpiece is made by a process of combining a powdered 312 component, e.g., Ti3SiC2, with a powdered component that is soluble in the 312 component, e.g., TiSi2 in Ti3SiC2, forming the mixture into a green body, heating the green body under pressureless sintering conditions to a temperature above a point at which a liquid is formed but below the melting point of the 312 compound to yield a dense ceramic workpiece, and thereafter cooling the dense 312 ceramic workpiece.

Gottselig B., Gyarmati E., Naoumidis A. Hot Pressing Process for Bonding Silicon Carbide Shaped Parts and also Silicon Carbide Intermediary for Bonding the Shaped Parts / DE 3744245, 1988-12-22.
For the bonding of silicon carbide shaped parts, a 1-3 mu m thick titanium layer is applied to at least one of the contact surfaces, after which the parts are joined by hot pressing at 1200-1600°C, in particular 1450-1500°C, and pressing pressures of 5-100 MPa, in particular 15-30 MPa, in reducing protective gas, (in particular Ar/H2 mixtures) for at least 0.5 hour, in particular about 1 hour. For the joining process, use is particularly advantageously made of a SiC intermediary (in particular a ring for binding sections of pipe) fitted to the shaped parts to be bonded and having a thickness of 1-10 mm, which intermediary is coated on both sides with 1-3 mu m of titanium in each case. Under the specified conditions, a titanium carbosilicide of the composition Ti3SiC2 of sufficient plasticity is formed along the joint seam, which compound contributes to the reduction of internal stresses of the composite after joining.

Gottselig B., Gyarmati E., Naoumidis A. Hot-Pressing Process for Joining Silicon Carbide Shaped Parts / DE 3811945, 1989-10-19.
For bonding silicon carbide shaped parts by hot pressing, a Ti3SiC2 layer is applied to at least one of the polished fitting surfaces, after which the combined shaped parts are subjected to a pressing procedure at from 1250 to 1550°C at pressing pressures of from 5 to 50 MPa in a reducing atmosphere for at least 15 minutes. The Ti3SiC2 is preferably applied or sputtered on as powder, in particular having a maximum particle diameter of 50 mu m, and optionally in dispersed form or as a sheet. A "contamination" of the Ti3SiC2 phase with extraneous phases, such as TiSi2, Ti5Si3 or TiC should preferably not exceed 15%.

Gottselig B., Gyarmati E., Naoumidis A. Method and Components for Bonding a Silicon Carbide Molded Part to Another Such Part or to a Metallic Part / US 4961529, 1990-10-09.
A layer of titanium carbosilicide Ti3SiC2 on a silicon carbide surface polished for making a joint makes it possible to join silicon carbide bodies together in a hot pressing procedure and obtaining a joint strength comparable to the strength of the silicon carbide material. Such a layer on silicon carbide also makes possible brazed juoints with steel alloy or nickel based alloy parts. The layer may be applied directly by a powder dispersion in a volatile but viscous glycol or by sputtering or else the layer can be made in place from a powder mixture of components, especially TiC0,8 and Tisi2 (5:1) or a titanium layer of a thickness in the range of 1 to 3 mu m that reacts with the silicon carbide surface. When silicon carbide parts are joined together, the heating up to make the joint also serves to convert a titanium layer into titanium carbosilicide. When silicon carbide is to be joined with metal, a preliminary heating step is necessary to at first convert a powder mixture or a titanium layer on the silicon carbide surface to Ti3SiC2. Alternatively a Ti3SiC 2 surface layer can be formed by a sputtering process. The Ti3SiC2 layer favors brazing of the metal part to the silicon carbide surface as treated. The heating requires reaching a temperature in the region from 1200 DEG to 1600 DEG C. for periods between a half hour to about three hours in the presence of a reducing protective gas.

Gottselig B., Gyarmati E., Naoumidis A. Process for Improving the Wettability of the Surfaces of SiC Ceramic by Metal / DE 3744250 1989-08-17.
To improve the wettability of the surfaces of SiC ceramic by metal, a 1-3 mu m thick titanium layer is applied, preferably by sputtering, to the polished ceramic surface, preferably cleaned by means of Ar<+> etching. The ceramic is then maintained at a temperature in the range of 1200-1550°C, preferably at 1450°C, for at least 0.5 hour, in particular for 1-2 hours, under protective gas (preferably argon freed of oxidising residues). The heating rate is here preferably about 20-60°C/min. In this way there is formed on the ceramic surface a titanium carbosilicide layer (Ti3SiC2) which is outstandingly suitable, for example, for soldered and diffusion-welded bonds to metals.

Grogen W. A., Kraan M. J., Van Hal P. F., De With G. Method of Making a Substrate of a Ceramic Material / US 5635429, 1997-06-03.
The invention relates to a substrate made from a novel type of ceramic material. This material comprises 44-47 at. % A1, 31-39 at. % O, 8-13 at. % C and 8-12 at. % N. Substrates made from this material exhibit a relatively high heat conductance, a relatively great strength and their coefficient of expansion is equal to that of Si. Consequently, the substrates in accordance with the invention are very suitable for use in the Si-semiconductor technology. The main component of the ceramic material of the substrates preferably corresponds to the formula Al28O21C6N6. The invention also provides methods of manufacturing substrates and other mouldings from this material.

Hirai T., Goto T. Plastically Deformable Polycrystalline Ceramics / JP 63274665, 1988-11-11.
PURPOSE: To provide polycrystalline ceramics which has excellent heat resistance, oxidation resistance and corrosion resistance and is useful for mechanical parts, sealing materials, etc., by consisting the same of Ti3SiC2 single phase and providing plastic deformability at an ordinary temp.
CONSTITUTION: Reactive gases consisting of >=1 kinds among chloride of Ti such as TiCl4, halide of Si such as SiCl4, halogenated hydride such as SiHCl3, and halogenated hydrocarbon such as Si(CH3)4 and >=1 kinds among halide of carbon such as CCl4, hydride such as CH4 and halogenated hydride such as CH3F are introduced into a reaction furnace of a CVD synthesis method. The reaction furnace is then heated to 1,200-1,400 deg.C and the total pressure of the reactive gases is regulated to 1-760Torr. The plastically deformable polycrystalline ceramics which consists of the Ti3SiC2 single phase and is coated with the metals, inorg. compds. or the composite thereof having 100g-800kg/ mm<2> measured load of Vickers hardness at an ordinary temp. and >=1,000 deg.C m.p. on the surface of the carbon base body is thus produced.

Kiehl J.-P., Kuster D. Refractories with a High Content of Alumina and the Process for Their Production / US 4670407, 1987-06-02.
The invention relates to new refractories with a high content of alumina and the process for their production. The refractories are made up of alumina particles held by a binder capable of withstanding a reducing atmosphere at 850°C. The refractories are characterized by low porosity and high mechanical strength and are also inert towards coal ashes and slags at these temperatures. The binder used in the refractories consists of a combination of aluminum nitride and aluminum oxycarbide. The carbon required to the formation of the carbon oxide may be introduced in a form of carbon black or graphite, or may originate from a decomposition of a provisional or organic binder.

Lihrmann J.-M., Tirlocq J. Procédé de préparation de produits céramiques densifiés et produits céramiques ainsi obtenus / FR 2737489, 1997-02-07.
The invention relates to a process for the fabrication of the dense ceramic products based on silicon carbide, wherein a mixture of powders of SiC, Al4C3, AlN and Al2O3 is sintered with or without pressure by continuously raising the temperature with or without isothermal stage. During sintering, the densification is reached at a maximal temperature of 2020°C, preferably a maximum temperature lower than or equal to 1950°C. The composite ceramic product thus obtained has an original biphased structure which is comprised of a first SiC phase and a second cristalline phase consisting of a solid solution of AlN and Al2OC, the two phases being perfectly srtucturally compatible. The resulting ceramic products are usable particularly as thermomechanical ceramics or as binding phase for refractory material.

Lihrmann J.-M., Tirlocq J. Procédé d'élaboration de produits denses à base de carbure de silicium et produits composites ainsi obtenus / WO 9706119 A1, 1997-02-20.
[no abstract]
Robin-Brosse C., Rocher J.-P., Naslain R. Composite Material with a Ceramic Matrix with Lamellar Interphase Between Refractory Reinforcing Fibres and Matrix, and Process for Its Manufacture / FR 2675141, 1992-10-16.
In these fiber-reinforced ceramics, the reinforcing fibers comprise a relatively thin, lamellar coating of silicon titanium carbide (Ti3SiC2), which serves as bonding interlayer between the fibers and the matrix material. The bonding interlayer is formed on the fibers by vapor deposition from a mixt. of SiH2Cl2, TiCl4, C3H8, and H. The fibers are SiC fibers. The resulting SiC fiber-reinforced SiC ceramics had tensile strength 195, elongation 0.22%, and modulus of elasticity 189 GPa, vs. 80-100, 0.05, and 200, resp., for uncoated fiber-reinforced ceramics.

Schmid-Fetzer R., Wenzel R., Goesmann F. Titanium-Silicon Carbide Ceramic Production / DE 19749050, 1998-12-03.
A TixSiCy ceramic is produced by mixing Ti and SiC in the molar ratio 2.5-3.6:2 (preferably 3:2) and heating the mixture to cause reaction while allowing Si to evaporate. Preferably, the mixture is pressed at 500 MPa to form a green body and is then subjected to a three-stage heat treatment of preheating at 550-950 (especially 850-900) deg C for up to 15 mins. (especially 30 secs.), brief heating at above 950 deg C for up to 5 secs. and post-annealing at 600-1,600 (especially 1,500) deg C for up to 30 (especially 2) mins.

Sekhar J. A, Liu J.J. Carbon-based Bodies in Particular for Use in Aluminium Production Cells / US 5397450, 1995-03-14.
A carbon containing material for use in particular as an anode of electrolytic cells for the production of aluminum by the electrolysis of alumina in a cryolite-based electrolyte, consists substantially of a mixture of one or more particulate carbonaceous material(s) with a binder based on compounds of aluminum with carbon, oxygen and/or nitrogen, such as aluminum carbide or aluminum oxycarbide, or such compounds mixed with aluminum. This binder is obtained by mixing the particulate carbonaceous material(s) with particulate aluminum and with at least one lithium compound and/or with at least one aluminum compound in a liquid carrier, and heat treating to form the binder. The liquid carrier may comprise a binding agent selected from methyl cellulose, polyvinyl alcohol and colloidal suspensions, in particular colloidal alumina.

Virkar A. V., Cutler R. A., Lessing P. A., Huang J.-L. Dense Ceramics Containing a Solid Solution and Method for Making the Same / WO 8701693, 1987-03-26.
Dense ceramic composites comprising a mixture of a solid solution containing the elements Si, C, Al, O and N (referred to by the acronym SiCAlON) and a high temperature refractory phase have desirable physical properties and can be formed by pressureless sintering techniques. The refractory phase can be SiC, AlN, Al2O3, or AlON and constitutes between 1 and 99% of the volume of the ceramic. The method for pressureless sintering may also be used for densification of SiCAlON ceramics, or composites containing SiCAlON, allowing fabrication of the same into complex shapes economically.

Yamaguchi A., Chiyou S., Takahashi H., Takanaga S., Nonobe K. Carbon-containing Brick Containing Aluminum Oxycarbide / JP 9295857, 1997-11-18.
PROBLEM TO BE SOLVED: To provide a dense carbon-containing brick excellent in oxidation resistance, corrosion resistance and resistance to blending a specific amount of aluminum oxycarbide as a constituting component of a carbon-containing brick.
SOLUTION: This carbon-containing brick contains 3-40 wt.% of a carbonaceous material and 0.5 - 15 wt.% of aluminum oxycarbide. As the carbonaceous material, highly purified graphite is suitable in view of corrosion resistance at a high temperature. As a refractory material other than the carbonaceous material, various refractory materials such as an oxide, a carbide, a nitride or boride formerly well-known as a refractory material can be used. Preferably, a particle size of aluminum oxycarbide is made to <= 40 mu m.

Yamaguchi A., Takahashi H., Takanaga S., Mizuta Y. Prepared Unshaped Refractory Containing Aluminum Oxycarbide / JP 9295874, 1997-11-18.
PROBLEM TO BE SOLVED: To condense a structure of prepared unshaped refractory and improve corrosion resistance and spalling resistance by compounding the prepared unshaped refractory with aluminum oxycarbide.
SOLUTION: Aluminum oxycarbide is produced by heating a mixed powder of metallic aluminum powder, graphite or amorphous carbon powder and alumina at >= 1400°C in argon or carbon monoxide gas srteam. Prepared unshaped refractory, consisting of one or more kinds selected from basic, neutral or acidic oxides containing a component such as MgO, CaO, Al2O3, Cr2O3, SiO2 or ZrO2, carbides, nitrides and borides, and a carbonaceous material, is compounded with 0.5 - 17 wt.% of the aluminum oxycarbide.

Zeiringer H. Method of Producing a Grinding Medium / US 4643983, 1987-02-17.
A method of producing a grinding medium on the basis of alpha-alumina and least one alumina carbide selected from the group consisting of Al2OC and Al4O4C comprises the steps of melting a mixture of alumina or a material rich in alumina with a carbon-containing reducing agent to obtain a melt, rapidly cooling the melt to obtain a solidified body, breaking the solidified body into abrasive grains, and subjecting the abrasive grains to a heat treatment at a temperature of 500°C and 1500°C for period of three minutes to 24 hours.

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