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2001 | PATENTS
| INTERNET
| Carpenter
R.W., Braue W., Cutler R.A. Transmission Electron
Microscopy of Liquid Phase Densified SiC // J. Mater. Res.
- 1991. - 6(9). - 1937. Transmission electron microscopy was used to characterize microstructures of SiC densified using a transient liquid phase (resulting from the reaction of Al2O3 with Al4C3 ) by hot pressing at 1875 °C for 10 min in N2 . High resolution electron microscopy showed that the SiC grain boundaries were free of glassy phases, suggesting that all liquid phases crystallized upon cooling. Phases that might be expected due to reactive sintering (i.e., AlN, Al2OC, Al2O3, Al4O4C, Al3O3N, or solid solutions of SiC, AlN, and Al2OC) were not observed. However, significant Al, Si, O, and C concentrations were found at all triple junctions of these rapidly densified ceramics. |
| Chistyakov
A. A.; Gavrish A. M.; Ustichenko V. A. Crystal
Optics Constants for Aluminum Oxycarbide (Al4O4C)
// Neorg. Mater. - 1991. - 27(8). - 1657-1659. (Russian). [no abstract] |
| Klemm
H., Tanihata K., Miyamoto Y. Gas Pressure Combustion
Sintering of Materials in the Titanium-Silicon-Carbon System
/ Hot Isostatic Pressing: Theory Appl., Proc. Int. Conf., 3rd. - London,
UK, 1991. - 451-456. Processing by gas-pressure combustion sintering (GPCS) to produce dense materials in the system Ti-Si-C was studied. By systematic variations of the reactant compn. it was possible to produce different materials consisting of Ti5Si3, TiSi2, Ti3SiC2, TiC, or SiC. The complete densification of the samples was not in all cases successful. The time at high temps. was possibly too short to densify the materials with more refractory character. Not all the phases built up by combustion at high temps. are stable at lower temps. and some reactions occur during cooling, influencing densification and properties of the final material. Some properties of fully densified samples produced by GPCS are given. The ceramic-metal composite produced by higher addn. of Ti showed better mech. properties in bending strength and fracture toughness. |
| Misra
A. K. Thermochemical Analysis of the Silicon
Carbide - Alumina Reaction with Reference to Liquid-Phase Sintering
of Silicon Carbide // J. Am. Ceram. Soc. - 1991. - 74(2). -
345-351. The stabilities of different phases in the Si-Al-C-O system are calculated from thermodynamic considerations with the objective of identifying the liquid phases formed during sintering of SiC in the presence of Al2O3. It is shown that a liquid phase can form at the sintering temperatures by the reaction of SiC with Al2O3. Depending of the carbon activity, the liquid can be either of the following: Al2O3 + Al4C3, SiC + Al4C3, or molten aluminum. The stability of the aluminosilicate melts that can form by the reaction of Al2O3 with the surface silica layer on SiC powders is also evaluated. Several factors that influence liquid-phase sintering, such as the solubility of SiC in the melts and the generation of gases during sintering, are discussed. The results of the thermodynamic analysis are compared with the observed sintering behavior for SiC. |
| Oden
L. L. Reply to "Comment on 'Contribution
to the Phase Diagram Al4C3
- AlN - SiC'" // J. Am. Ceram. Soc. -
1991. - 74(9). - 2329. [no abstract] |
| Oscroft
R. J., Thompson D. P. Comment on 'Contribution
to the Phase Diagram Al4C3-AlN-SiC'
// J. Am. Ceram. Soc. - 1991. - 74(9). - 2327-2328. [no abstract] |
| Nishino
T., Urai S., Okamoto I, Naka M. Wetting and
Reaction Products Formed at the Interface Between Silicon Carbide
and Copper-Titanium Alloys // Yosetsu Gakkai Ronbunshu. - 1991.
- 9(4). - 519-525. The contact angle of molten Cu-Ti alloys contg. 5-60 at.% Ti on SiC was investigated by using the sessile drop technique at 1373 K in vacuum. The contact angle of molten Cu-Ti alloys reached an equil. value in 3.6 ks at 1373 K. The equil. contact angle of Cu-Ti alloys on SiC decreased drastically with increasing Ti content. Cu-Ti alloys contg. .gtoreq.30 at.T Ti had an equil. contact angle of .ltoreq. 7°. The addn. of Ti to Cu depresses the reaction of Cu with SiC by forming TiC and Ti3SiC2 at the SiC/Cu-Ti interface. This behavior accounts for the superior wetting of SiC by Cu-Ti alloys. The Cu-Ti alloys are useful fillers for brazing SiC. |
