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Arunajatesan S., Carim A. H. Synthesis of Titanium Silicon Carbide // J. Am. Ceram. Soc. - 1995. - 78(3). - 667-672.
[no abstract]
Borsella E., Boptti S., Cesile M. C., Martelli S., Alexandrescu R., Giorgi R., Nannetti C. A., Turtu S., Zappa G. Nanoscale Si-C and Al-O-(N,C) Ceramic Powders by Laser Synthesis from Gaseous Precursors // Nanostruct. Mater. - 1995. - 6(1-4). - 341-344.
Laser induced photosynthesis has been employed to produce nanosized aluminium oxide powders. The dependence of the reaction outcomes on the process parameters, in particular on reactant gases (trimethylaluminium TMA and nitrous oxide) relative concentration, has been investigated in several different conditions. The experimental results indicate two main reaction paths. Low TMA relative concentration leads to the formation of nanocrystalline g-Al2O3 with traces of Al3O3N compounds. Increasing the TMA concentration the synthesis of aluminium oxycarbide (Al2OC) is observed. Only the first reaction path is able to produce, after calcining at 1400°C, nanosized a-Al2O3 powder. Preliminary attempts in sintering laser produced silicon carbide have shown, that, due to the nanometric dimension of the powder particles, it is possible to retain the b-SiC low temperature phase even for sintering temperature up to 2150°C.

Ivanovsky A. L., Novikov D. L., Shveikin G. P. Electronic Structure of Ti3SiC2 // Mendeleev Commun. - 1995. - (3). - 90-91.
[no abstract]
Lis J., Miyamoto Y., Pampuch R., Tanihata K. Ti3SiC2-based Materials Prepared by HIP-SHS Techniques // Mater. Lett. - 1995. - 22(3,4). - 163-168.
[no abstract]
Lis J., Pampuch R., Stobierski L., Faryna M. Preparation and Properties of New Structural Ceramics in the System of Ti-Si-C / Adv. Ceram. Struct. Tribol. Appl., Proc. Int. Symp. - Montreal, Que., 1995. - 571-580.
Self-propagating high-temp. synthesis (SHS) is a method having some special opportunities in a prodn. of new ceramic materials. This is discussed taking as an example materials in the system Ti-Si-C. An interesting phase existing in this system is Ti3SiC2. This phase has some unique properties including low hardness, high fracture and impact resistance, and potential ductile behavior. Because of the specific mechanisms of rapid combustion-type SHS reactions, it is possible to prep. of Ti3SiC2-rich powders that can be used as the precursors for prepn. of Ti3SiC2-based polycrystals. Densification of these powders occurs with some secondary phenomena such as liq.-phase reactions with transient intermetallic phase and recrystn. of grains. As a result, materials with controlled microstructures in form of particulate composites with Ti3SiC2 matrix and TiC inclusions can be obtained. The main feature of these materials is high fracture toughness, in a range of 7 to 9 MPa m1/2 and specific mechanism of failure.
Naka M., Feng J., Schuster J. C. High Temperature Reactions of Ti with SiC // Trans. JWRI. - 1995. - 24(1). - 77-82.
Bonding of SiC to SiC was conducted using Ti foil at bonding temps. from 1373 K to 1773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 µm. At a bonding time of 0.3 ks, TiC at the Ti side and a mixt. of Ti5Si3Cx and TiC at the SiC side were formed, yielding the structure sequence of b-Ti/TiC/Ti5Si3Cx + TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti5Si3Cx layer phase appeared between SiC and the mixt. of Ti5Si3Cx and TiC. Upon the formation of Ti3SiC2 (T phase) after the bonding time of 3.6 ks, the complete diffusion path was obsd. as follows: .beta.-Ti/TiC/Ti5Si3Cx + TiC/Ti5Si3Cx/ Ti3SiC2 /SiC. The activation energies for growth of TiC, Ti5Si3Cx and Ti3SiC2 were 194, 242 and 358 kJ/mol, resp.

Pampuch R., Raczka M., Lis J. The Role of Liquid Phase in Solid Combustion Synthesis of Ti3SiC2 // Int. J. Mater. Prod.Technol. - 1995. - 10(3-6). - 316-324.
[no abstract]
Pampuch R., Lis J. Ti3SiC2 - a Plastic Ceramic Material // Adv. Sci. Technol. - 1995. - 3B (Ceramics: Charting the Future). - 725-732.
Hexagonal Ti3SiC2 shows a unique combination of properties that are typical for ceramics with a room-temp. plasticity akin to the one of metals. A rational explanation of plasticity of Ti3SiC2 crystals is presented in terms of the crystal structure and interat. bonds. Plasticity is obsd. also in polycrystals contg. the hexagonal Ti3SiC2 phase, stable up to 1400-1450 °C.

Qiu C., Metselaar R. Thermodynamic Evaluation of the Al2O3 - Al4C3 System and Stability of Al-oxycarbides // Z. Metallkd. - 1995. - 86(3). - 198-205.
Thermodynamic properties of the pseudo-binary Al2O3-Al4C3 system have been evaluated based on thermodynamic models. An ionic-liquid model was applied to the liquid slag phase and a compound-energy model to Al2OC. Both the models are with two sublattices' and latter one can be extended to describe the solid solution phases formed among Al2OC, AlN, and SiC. A description of the system was obtained and then used to calculate the Al2O3-Al4C3 phase diagram which shows satisfactory agreement with experimental observation. A series of potential diagrams was also calculated for the Al-C-O system, which illustrate the effect of partial pressures of Al, CO, and CO2 gas on the stability of Al4C3, Al2O3, Al4O4C, and Al2OC at different temperatures. These diagrams can provide an important basis for the carbothermic reduction of alumina to produce Al4C3.

Tong X., Okano T., Iseki T., Yano T. Synthesis and High Temperature Mechanical Properties of Ti3SiC2/SiC Composite // J. Mater. Sci. - 1995. - 30(12). - 3087-3090.
[no abstract]
Tsuchida T., Kitagawa T., Inagaki M. Self-Combustion Reaction Induced by Mechanical Activation of Al-Si-C Powder Mixtures // Eur. J. Solid State Inorg. Chem. - 1995. - 32(7/8). - 629-638.
The powders of Al, Si and C mixed in various molar ratios were ground in a planetary ball mill. When the mech. activated mixts. were exposed to air, they ignited spontaneously and the self-propagating high-temp. synthesis (SHS) took place in two successive steps. The final products were aluminum nitride, aluminum carbide, aluminum oxycarbide, silicon carbide and alpha alumina. From the measurement of the lattice const., it was found that aluminum nitride obtained is solid solns. in the system of AlN-Al2OC-SiC.

Wang Y., Carim A. H. Ternary Phase Equilibria in the Zr-Si-C System // J. Am. Ceram. Soc. - 1995. - 78(3). - 662-666.
[no abstract]

Yamaguchi A., Zhang S. Synthesis and Some Properties of Al4SiC4 // J. Ceram. Soc. Jpn. - 1995. - 103(1). - 20-24.
The synthesis process and the formation mechanism of Al4SiC4 were investigated using Al, Si, and C as starting materials. Properties such as hydration resistance of the synthesized Al4SiC4 were examined. SiC and Al4C3 begin to form from about 800 °C and 900 °C, respectively. When the temperature is above 1300 °C, both products further react with each other to form Al4SiC4. With increasing temperature and time, the formation ratio of Al4SiC4 increases. The addition of Al2O3 can facilitate the formation of Al4SiC4. The hydration resistance of Al4SiC4 is excellent and sufficient for the practical use.


Yano T. Synthesis and Mechanical Properties of Ti3SiC2 Ceramics // Bull. Res. Lab. Nucl. React. - 1995. - 19. - 88-89.
Ti, TiC and TiSi powders were reaction sintered, wet milled, and hot pressed at 45 MPa and 1400° for 30 min to give Ti3SiC2 ceramic specimens. The fracture toughness was 6.9 MPa-m0.5 at room temp. The flexure strength in bending was > 500 MPa at room temp. and 1000° and much less at 1200°. During air oxidn., the surface oxide layer was porous and nonprotective at 1000°.

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