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2001 | PATENTS
| INTERNET
| Barsoum M. W. Comment on “Reaction Layers Around SiC
Particles in Ti: an Electron Microscopy Study” // Scripta Materialia.
- 2000. - 43. - 285–286. [no abstract] |
| Du
Y., Schuster
J. C., Seifert H. J., Aldinger F. Experimental
Investigation and Thermodynamic Calculation of the Titanium – Silicon
– Carbon System // J. Amer. Cer. Soc. - 2000. - 83(1). - 197-203.
The 1100°C isothermal section and the isopleths at 5, 10, and 15 at.% C in the Ti-Si-C system were determined by DTA and XRD methods. Five invariant reactions (L (liquid) = Si + SiC + TiSi2 at 1330°C, L = TiSi + TiSi2 + Ti5Si3Cx at 1485°C, L + Ti5Si3Cx = Ti3SiC2 + TiSi2 at 1485°C, L + Ti3SiC2 = TiSi2 + SiC at 1473°C, and L + TiC = bcc-(Ti) + Ti5Si3Cx at 1341°C) were observed. The transition temperature for L + TiC = Ti3SiC2 + SiC was measured by the Pirani technique. Optimized thermodynamic parameters for the Ti-Si-C system were then obtained by means of the CALPHAD (calculation of phase diagrams) method applied to the present experimental results and reliable literature data. The calculations satisfactorily account for most of the experimental data. |
| El-Raghy T., Blau P., Barsoum M. W. Effect of Grain Size
on Friction and Wear Behavior of Ti3SiC2
// Wear. - 2000. - 238(2). - 125-130. The effects of grain size on the sliding friction, sliding wear, and two-body abrasive wear behavior of Ti3SiC2 were investigated. Samples with two different grain sizes, namely, 5 µm (‘fine’) and 100 µm (‘coarse’), were used as discs in pin-on-disk sliding wear tests against a 440C steel pin and as rectangular pins in diamond belt abrasion tests. In the pin-on-disc test, irrespective of the grain size, it was found that the material undergoes an initial transition stage where the friction coefficient, µ, increases linearly to 0.15 to 0.45. After this transition stage, µ rises to steady state values, of about 0.83 for both coarse- and the fine-grained materials. It was concluded that the transition from the low to high µ is due to accumulation of debris entrapped between the disc and the pin, resulting in third-body abrasion. The average sliding wear rates in the pin-on-disc tests were 4.25 x 10-3 and 1.34 x 10-3 mm3/N.m for the fine and the coarse grains, respectively. In the diamond belt abrasion tests, the average wear rates were much higher: 6.14 x 10-2 and 3.96 x 10-2 mm3/N.m for the fine and the coarse grains, respectively. In the fine-grained material, it was concluded that the wear mechanisms include grain pull out and grain fracture. Delamination, crack bridging, grain deformation, microcracking, grain pull out and grain fracture are the operative wear mechanisms observed in the case of the coarse grained material. It is this multitude of possible sliding energy dissipation mechanisms that is believed to enhance the wear resistance of the coarse-grained material relative to the fine-grained one. |
| Gilbert
C. J., Bloyer D. R.,
Barsoum M. W., El-Raghy
T., Tomsia A. P., Ritchie
R. O. Fatigue-Crack Growth and Fracture
Properties of Coarse and Fine-Grained Ti3SiC2
// Scripta Materialia. - 2000. - 42(8). - 761 – 767. [no abstract] |
| Grass V. E. , Ryabkov Yu. I. , Sitnikov P. A. Synthesis
of Aluminum Monoxycarbide / Chemistry of Solid State and Functional
Materials, Proc. Russ. Conf. - Ekaterinburg, 2000. - P. 111. (Russian). [html, win-1251] |
| Grass V. E. , Ryabkov Yu. I. X-ray Diffraction Study
of Aluminum Monoxycarbide / Chemistry of Solid State and Functional
Materials, Proc. Russ. Conf. - Ekaterinburg, 2000. - P. 110.
(Russian). [html, win-1251] |
| Kooi
B. J., De
Hosson J. Th. M. Reply to Comment
on “Reaction Layers Around SiC Particles in Ti: an Electron Microscopy
Study” // Scripta Materialia. - 2000. - 43. - 287–289. [no abstract] |
| Radovic
M., Barsoum M. W., El-Raghy T., Seidensticker J., Wiederhorn S. Tensile
Properties of Ti3SiC2
in the 25-1300 °C Temperature
Range
// Acta Materialia - 2000. - 48(2). - 453 – 459. Although significant progress has been achieved in understanding the mechanical behavior of bulk, polycrystalline Ti3SiC2 in compression and flexure, as far as we are aware there are no reports in the literature dealing with its mechanical response under tension. In this paper, we report on the functional dependence of the tensile response of fine-grained (3-5 µm) Ti3SiC2 samples on strain rates in the 25-1300 oC temperature range. The tensile response of Ti3SiC2 is a strong function of strain rate and temperature. Increases in testing temperatures, and decreases in testing strain rates lead to large (? 25 %) tensile plastic deformations. Strain rate jump/drop tests and stress-jump creep tests confirm the high values for the strain rate sensitivity coefficients (0.42-0.56) obtained from the tensile tests. These values are equal to, or greater than, the strain rate sensitivity of most superplastic ceramics. The large elongations to failure result primarily from a high degree of damage; not from a structure that remains self-similar throughout deformation (as in superplasticity). Another important distinction between superplasticity in ceramics and the deformation of Ti3SiC2 is that in the former the grains are typically about an order of magnitude smaller than the ones tested here. |
| Tzenov
N., Barsoum
M. W. Synthesis and Characterization
of Ti3AlC2
// J. Amer. Cer. Soc. - 2000. - 83(4). - 825-832. Polycrystalline bulk samples of Ti3Al1.1C1.8 were fabricated by reactively hot isostatically pressing of Ti, graphite and Al4C3 powders at 70 MPa and 1400 °C for 16 hours. The HIPed samples are predominantly single phase - = 4 vol. % Al2O3- fully dense and have a grain size of = 25 µm. Like Ti3SiC2 with which it is isostructural, this carbide has an unusual combination of properties. It is relatively soft (Vickers hardness = 3.5 GPa), elastically stiff (Young’s and shear moduli of 297 and 124 GPa), but lightweight (4.2 g/cm3) and easily machinable. The room-temperature electrical resistivity is 0.35±0.03 µW m and decreases linearly with decreasing temperature. The temperature coefficient of resistivity is 0.0031 K-1. The coefficient of thermal expansion in the 251200 °C temperature range is (9.0 ± 0.2) x 10-6 K-1. The room temperature compressive and flexural strengths are, respectively, 560±20 MPa and 375 ± 15 MPa. In contrast to flexure where the failure is brittle, the failure in compression is non-catastrophic, and is accompanied by some plasticity. The origin of that plasticity is believed to be due to the formation of a "shear" band. The "shear" band, angled at = 45 ° to the applied load, has a high volume fraction of voids and cavities that are bridged by ligaments comprised of grains that have been severely deformed, delaminated and/or kinked. Ti3Al1.1C1.8 is also a highly damage tolerant material; a 10 kg load Vickers indentation made in a 1.5 mm thick bar reduces the post-indentation flexural strength by about 7 %. It is also quite thermal shock resistant. Above 1000 °C, the deformation in compression is accompanied by significant plasticity and quite respectable ultimate compressive stresses (200 MPa at 1200 °C). |
| Tzenov
N., Barsoum M. W., El-Raghy T. Influence of
Small Amounts of Fe and V on the Synthesis and Stability of Ti3SiC2
//
J. Europ. Cer. Soc. - 2000. - 20(6). - 801 – 806. Polycrystalline bulk samples of (Ti1-yMey)3SiC2, where Me = Fe or V and y = 0.01 to 0.1, were fabricated reactively hot isostatic pressing of a mixture of Ti, C (graphite), SiC and Fe or V at 1450 °C for 4 hours under a pressure of 60 MPa. X-ray diffraction and scanning electron microscopy of the fully dense samples have shown that small amounts of Fe and V interfere with the reaction between Ti, C and SiC leading to the presence of SiC, TiCx, as well as different Fe and V-containing phases in the final microstructures. The presence of these impurity phases also reduces the temperature at which Ti3SiC2 decomposes. The decomposition is manifested by the formation of an extensive network of pores when the samples are annealed at 1600 °C, a temperature at which pure Ti3SiC2 is thermally stable. The concentration threshold for this decomposition is as low as 1 at %. |
| Zhou Y. , Sun Z. Temperature Fluctuation / Hot Pressing
Synthesis of Ti3SiC2
// J. Mater. Sci. - 2000. - 35(17). - 4343-4346. [no abstract] |
| Zhou Y., Sun Z. Crystallographic Relations Between
Ti3SiC2
and TiC
// Mat. Res. Innovat. - 2000. - 3(5). - 286-291. [no abstract] |
| Zhou
Y., Sun Z. Electronic Structure and
Bonding Properties in Layered Ternary Carbide Ti3SiC2
// J. Phys.: Condens. Matter. - 2000 (July). - 12(28). - 457-462. Ab initio calculations based on the density-functional pseudopotential approach have been used to study the electronic structure and chemical bonding in layered machinable Ti3SiC2 ceramic. The calculations reveal that all three types of bonding - metallic, covalent and ionic - contribute to the bonding in Ti3SiC2. The high electric conductivity is attributed to the metallic bonding parallel to the basal plane and the high modulus and high melting point are attributed to the strong Ti-C-Ti-C-Ti covalent bond chains in the structure. |
| Zhou
Y. C., Dong H. Y., Yu B. H. Development
of Two-Dimensional Titanium Tin Carbide (Ti2SnC)
Plates Based on the Electronic Structure Investigation
// Mat. Res. Innovat. - 2000. - 4(1). - 36–41. Titanium tin carbide (Ti2SnC) is a novel layered ternary compound. The ab initio calculations on the electronic structure and bonding properties indicated that Ti2SnC exhibit anisotropy of chemical bonding and properties. The electrical conductivity parallel to the basal plane is metallic and is much higher than that in c-axis. Thus Ti2SnC material in two-dimensional quasi-infinite form with the sheet surface parallel to the basal plane will show superior properties and have diverse device applica-tions. Based on the theoretical predicted anisotropic electronic structure and properties, two-dimensional Ti2SnC plates were synthesized through a solid–liquid reaction process utilizing elemental Ti, Sn and C as starting materials. X-ray diffraction and scanning electron microscopy demonstrated that the morphology of the as-prepared plates were two-dimensional sheets. And the sheet surface was parallel to the (001) plane of Ti2SnC. |
